Temperature‐dependent damage production in ion‐implanted strained‐layer superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98384
Reference17 articles.
1. Be‐implantation doping of GaAsxP1−x/GaP strained‐layer superlattices
2. An ion-implanted Ga(AsP)/GaP strained-layer superlattice photodetector
3. Ion implantation into strained-layer superlattices
4. Ion-implantation doping of strained-layer superlattices
5. Characterization of ion‐implantation doping of strained‐layer superlattices. I. Structural properties
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1. Ion-beam induced effects in multi-layered semiconductor systems;physica status solidi (b);2016-07-15
2. Ion beam mixing characteristics of MOCVD grown InGaAs/GaAs superlattices;Journal of Electronic Materials;1994-02
3. Ion mixing of III‐V compound semiconductor layered structures;Journal of Applied Physics;1992-03-15
4. Mixing of GaAs/(Ga,Al)As interfaces by Ga+implantation;Journal of Applied Physics;1991-08
5. Ion mixing of semiconductor superlattices;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-07
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