Molecular-dynamics model of energetic fluorocarbon-ion bombardment on SiO2. II. CFx+ (x=1, 2, 3) ion etch characterization
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1893206
Reference11 articles.
1. Observation of surface reaction layers formed in highly selective SiO2 etching
2. Relationship of etch reaction and reactive species flux in C4F8/Ar/O2 plasma for SiO2 selective etching over Si and Si3N4
3. Selective SiO2-to-Si3N4 etching in inductively coupled fluorocarbon plasmas: Angular dependence of SiO2 and Si3N4 etching rates
4. Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism
5. Selective etching of SiO2 over polycrystalline silicon using CHF3 in an inductively coupled plasma reactor
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1. Molecular dynamics simulation of oxide-nitride bilayer etching with energetic fluorocarbon ions;Journal of Vacuum Science & Technology A;2022-12
2. Molecular dynamics study on fluorine radical multilayer adsorption mechanism during Si, SiO2, and Si3N4etching processes;Japanese Journal of Applied Physics;2016-10-21
3. Molecular dynamics simulations of Si etching in Cl- and Br-based plasmas: Cl+ and Br+ ion incidence in the presence of Cl and Br neutrals;Journal of Applied Physics;2015-12-21
4. Plasma-surface Interactions in Material Processing;Journal of Physics: Conference Series;2010-11-01
5. Molecular dynamics simulation analyses on injection angle dependence of SiO2 sputtering yields by fluorocarbon beams;Thin Solid Films;2007-04
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