Molecular dynamics study on fluorine radical multilayer adsorption mechanism during Si, SiO2, and Si3N4etching processes
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/55/i=11/a=116204/pdf
Reference23 articles.
1. Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism
2. Overview of atomic layer etching in the semiconductor industry
3. A molecular dynamics investigation of fluorocarbon based layer-by-layer etching of silicon and SiO2
4. keV particle bombardment of semiconductors: A molecular-dynamics simulation
5. The molecular dynamics simulation of ion-induced ripple growth
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1. Etching mechanism of amorphous hydrogenated silicon nitride by hydrogen fluoride;Applied Surface Science;2024-05
2. Topographically-selective atomic layer etching of SiO2 using radical fluorination of the surface followed by Ar ion bombardment;Japanese Journal of Applied Physics;2023-12-01
3. Prediction of glassy silica etching with hydrogen fluoride gas by kinetic Monte Carlo simulations;The Journal of Chemical Physics;2023-03-01
4. Molecular dynamics study of SiO2 nanohole etching by fluorocarbon ions;Journal of Vacuum Science & Technology A;2023-03
5. Molecular dynamics simulation of oxide-nitride bilayer etching with energetic fluorocarbon ions;Journal of Vacuum Science & Technology A;2022-12
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