Molecular dynamics simulations of Si etching in Cl- and Br-based plasmas: Cl+ and Br+ ion incidence in the presence of Cl and Br neutrals-Reference-Cited by-同舟云学术

Molecular dynamics simulations of Si etching in Cl- and Br-based plasmas: Cl+ and Br+ ion incidence in the presence of Cl and Br neutrals

Published:2015-12-21 Issue:23 Volume:118 Page:233304
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Nakazaki Nobuya¹,Takao Yoshinori¹^ORCID,Eriguchi Koji¹,Ono Kouichi¹

Affiliation:

1. Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University, Kyoto-daigaku Katsura, Nishikyo-ku, Kyoto 615-8540, Japan

Funder

Japan Society for the Promotion of Science (JSPS)

Ministry of Education, Culture, Sports, Science, and Technology (MEXT)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4937449

Reference88 articles.

1. Developments of Plasma Etching Technology for Fabricating Semiconductor Devices

2. High aspect ratio silicon etch: A review

3. Plasma etching: Yesterday, today, and tomorrow

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