Thermal annealing of light‐induced defects inp‐i‐pandn‐i‐nhydrogenated amorphous silicon structures: Influence of hole and electron injection
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359212
Reference12 articles.
1. Influence of illumination during annealing of quenched defects in undoped amorphous silicon
2. Dependence of the Saturation of Light-Induced Defect Density in a-Si:H on Temperature and Light Intensity
3. Kinetics of recovery of the light‐induced defects in hydrogenated amorphous silicon under illumination
4. Light‐induced annealing of metastable defects in hydrogenated amorphous silicon
5. Thermal annealing of light-induced defects in hydrogenated amorphous silicon: Evidence for hole-induced annealing
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1. On the origin of the Staebler-Wronski effect;Journal of Applied Physics;2006-03-15
2. Electron-trapping-triggered anneal of defect states in silicon-rich hydrogenated amorphous silicon nitride;Journal of Applied Physics;1997-07
3. Defect generation by hole injection in hydrogenated amorphous silicon;Solid State Communications;1996-11
4. Role of Si–H bonding ina‐Si:H metastability;Journal of Applied Physics;1996-07
5. Stability versus structure in glow discharge hydrogenated amorphous silicon obtained from a wide range of deposition conditions;Journal of Non-Crystalline Solids;1996-05
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