Influence of illumination during annealing of quenched defects in undoped amorphous silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.12134/fulltext
Reference19 articles.
1. Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study
2. Reversibility of recombination‐induced defect reactions in amorphous Si:H
3. Intrinsic dangling-bond density in hydrogenated amorphous silicon
4. Thermal creation of metastable defects in a-Si:H
5. Critique of (time)1/3kinetics of defect formation in amorphous Si:H and a possible alternative model—Comment on ‘‘Kinetics of the Staebler–Wronski effect in hydrogenated amorphous silicon’’ [Appl. Phys. Lett.45, 1075 (1984)]
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