Thermal annealing of light-induced defects in hydrogenated amorphous silicon: Evidence for hole-induced annealing-Reference-Cited by-同舟云学术

Thermal annealing of light-induced defects in hydrogenated amorphous silicon: Evidence for hole-induced annealing

Published:1994-06 Issue:6 Volume:69 Page:327-332
ISSN:0950-0839
Container-title:Philosophical Magazine Letters
language:en
Short-container-title:Philosophical Magazine Letters

Author:

Meaudre R.,Vignoli S.,Meaudre M.

Publisher

Informa UK Limited

Subject

Condensed Matter Physics

Link

http://www.tandfonline.com/doi/pdf/10.1080/09500839408242441

Reference30 articles.

1. Kinetic and steady‐state effects of illumination on defects in hydrogenated amorphous silicon

2. Delahoy, A. E. and Tonon, T. Stability of Silicon Alloy Materials and Devices. American Institute of Physics Conference Proceedings. Edited by: Stafford, B. L. and Sabisky, E. Vol. 157, pp.263New York American Institute of Physics.

3. Isolating the rate of light-induced annealing of the dangling-bond defects in a-Si:H

4. Kinetics of recovery of the light‐induced defects in hydrogenated amorphous silicon under illumination

5. Light‐induced annealing of metastable defects in hydrogenated amorphous silicon

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Pulsed-illumination study of metastable defect creation time scales in hydrogenated amorphous silicon;Physical Review B;2004-05-26

2. Metastable defect creation and annealing under illumination in intrinsic hydrogenated amorphous silicon deposited from helium‐silane mixtures;Philosophical Magazine B;1996-01

3. Thermal annealing of light‐induced defects inp‐i‐pandn‐i‐nhydrogenated amorphous silicon structures: Influence of hole and electron injection;Journal of Applied Physics;1995-06

4. Light-induced Annealing of Photocreated Dangling Bonds in Hydrogenated Amorphous Silicon;Japanese Journal of Applied Physics;1995-04-15

5. Equilibrium temperature in intrinsic hydrogenated amorphous silicon under illumination;Physical Review B;1994-09-15