Metastable defect creation and annealing under illumination in intrinsic hydrogenated amorphous silicon deposited from helium‐silane mixtures-Reference-Cited by-同舟云学术

Metastable defect creation and annealing under illumination in intrinsic hydrogenated amorphous silicon deposited from helium‐silane mixtures

Published:1996-01 Issue:2 Volume:73 Page:261-276
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Vignoli S.¹,Meaudre R.¹,Meaudre M.¹

Affiliation:

1. a Département de Physique des Matériaux , Unité de Recherche associée au CNRS 172 , 43 boulevard du 11 Novembre 1918, Villeurbanne Cedex , 69622 , France

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/01418639609365823

Reference42 articles.

1. Potential fluctuations due to inhomogeneity in hydrogenated amorphous silicon and the resulting charged dangling-bond defects

2. Kinetic and steady‐state effects of illumination on defects in hydrogenated amorphous silicon

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