Combined electrical and resonant optical excitation characterization of multi-quantum well InGaN-based light-emitting diodes-Reference-Cited by-同舟云学术

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Combined electrical and resonant optical excitation characterization of multi-quantum well InGaN-based light-emitting diodes

Published:2016-07 Issue:7 Volume:6 Page:075108
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Presa S.¹²,Maaskant P. P.¹,Kappers M. J.³,Humphreys C. J.³^ORCID,Corbett B.¹

Affiliation:

1. Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, Ireland

2. School of Engineering, University College Cork, Cork, Ireland

3. Dep. Material Science and Metallurgy, University of Cambridge, CB3 0FS, Cambridge, United Kingdom

Funder

European Commission (EC)

Science Foundation Ireland (SFI)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4959100

Reference29 articles.

1. White light emitting diodes with super-high luminous efficacy

2. Efficiency droop in nitride-based light-emitting diodes

3. Droop in III-nitrides: Comparison of bulk and injection contributions

4. Efficiency droop in light-emitting diodes: Challenges and countermeasures

5. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bias-dependent degradation of single quantum well on InGaN-based light emitting diode;Microelectronics Reliability;2023-11

2. Space-charge effect on photogenerated-current and -voltage in III-nitride optoelectronic semiconductors;Photonics Research;2021-08-24

3. Thermodynamic analysis of GaInN-based light-emitting diodes operated by quasi-resonant optical excitation;Journal of Applied Physics;2020-09-28

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