Thermodynamic analysis of GaInN-based light-emitting diodes operated by quasi-resonant optical excitation-Reference-Cited by-同舟云学术

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Thermodynamic analysis of GaInN-based light-emitting diodes operated by quasi-resonant optical excitation

Published:2020-09-28 Issue:12 Volume:128 Page:123103
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Han Dong-Pyo¹^ORCID,Oh Chan-Hyoung²,Shin Dong-Soo²^ORCID,Shim Jong-In²^ORCID,Iwaya Motoaki¹,Takeuchi Tetsuya¹,Kamiyama Satoshi¹,Akasaki Isamu¹³

Affiliation:

1. Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

2. Department of Photonics and Nanoelectronics, Hanyang University ERICA, Ansan, Gyeonggi-do 15588, South Korea

3. Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan

Funder

Japan Society for the Promotion of Science

Japan Science and Technology Agency

Ministry of Education, Culture, Sports, Science and Technology, Private University Research Branding Project

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0008041

Reference42 articles.

1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

2. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

3. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

4. Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN

5. Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer

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1. Temperature dependence of the piezoelectric field in GaInN/GaN quantum wells and its impact on the device performance;Journal of Applied Physics;2024-08-15

2. Comparative Study on Temperature‐Dependent Internal Quantum Efficiency and Light–Extraction Efficiency in III‐Nitride–, III‐Phosphide–, and III‐Arsenide–based Light‐Emitting Diodes;physica status solidi (a);2024-06-11

3. Space–Charge‐Limited Photocurrent as a Possible Cause for Low Power Conversion Efficiency in GaInN/GaN‐Based Optoelectronic Semiconductors;physica status solidi (a);2024-03-14

4. Origin of the High Forward Voltage and Low Voltage Efficiency of GaN-Based Light-Emitting Diodes at Cryogenic Temperatures;ACS Photonics;2024-01-18

5. Growth of Ga0.70In0.30N/GaN Quantum-Wells on a ScAlMgO4 (0001) Substrate with an Ex-Situ Sputtered-AlN Buffer Layer;Materials;2023-12-28

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