Multiple stacking of self-assembled InAs quantum dots embedded by GaNAs strain compensating layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2359623
Reference19 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. Ultrafast optical switching with CdTe nanocrystals in a glass matrix
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4. Lasing from InGaAs/GaAs quantum dots with extended wavelength and well-defined harmonic-oscillator energy levels
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2. Influence of InGaAs matrix thickness on the optical properties and strain distribution in self-assembled sub-monolayer InAs quantum dot heterostructures;Nanophotonics VIII;2020-04-01
3. Growth temperature dependence of cubic GaN step structures and cubic InN dot arrays grown on MgO (001) vicinal substrates;Japanese Journal of Applied Physics;2019-05-22
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5. Formation and Strain Analysis of Stacked Ge Quantum Dots With Strain‐Compensating Si 1− x C x Spacer;physica status solidi c;2017-09-11
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