Formation and Strain Analysis of Stacked Ge Quantum Dots With Strain‐Compensating Si 1− x C x Spacer-Reference-Cited by-同舟云学术

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Formation and Strain Analysis of Stacked Ge Quantum Dots With Strain‐Compensating Si _{1−
x} C _x Spacer

Published:2017-09-11 Issue:12 Volume:14 Page:1700197
ISSN:1862-6351
Container-title:physica status solidi c
language:en
Short-container-title:physica status solidi c

Author:

Itoh Yuhki¹²³,Kawashima Tomoyuki¹,Washio Katsuyoshi¹

Affiliation:

1. Graduate School of Engineering, Tohoku University6‐6‐05 Aza‐Aoba, Aramaki, Aoba‐ku, SendaiMiyagi 980‐8579Japan

2. Division for International Advanced Research and Education (DIARE), Tohoku University6‐3, Aza‐Aoba, Aramai, Aoba‐ku, SendaiMiyagi 980‐8578Japan

3. Japan Society for the Promotion of Science (JSPS) Research Fellow for Young Scientists, Kojimachi Business Center Building5‐3‐1 Kojimachi, Chiyoda‐kuTokyo 102‐0083Japan

Publisher

Wiley

Subject

Condensed Matter Physics

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.201700197

Reference21 articles.

1. Fast light-emitting silicon-germanium nanostructures for optical interconnects

2. Room-temperature electroluminescence from Si microdisks with Ge quantum dots

3. Transient photoresponse and incident power dependence of high-efficiency germanium quantum dot photodetectors

4. Simultaneous enhanced photon capture and carrier generation in Si solar cells using Ge quantum dot photonic nanocrystals

5. Precise control of thermal conductivity at the nanoscale through individual phonon-scattering barriers

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