Author:
Lockwood D. J.,Tsybeskov L.
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Baribeau J.-M., Wu X., Rowell N.L., Lockwood D.J.: Ge dots and nanostructures grown epitaxially on Si. J. Phys. Condens. Mat. 18, R174 (2006)
2. Lee, E.-K., Lockwood, D.J., Baribeau, J.-M., Bratkovsky, A.M., Kamins, T.I., Tsybeskov, L.: Photoluminescence dynamics and auger fountain in three-dimensional Si/SiGe multilayer nanostructures. Phys. Rev. B 79, 233307 (2009a)
3. Lee, E.-K., Lockwood, D.J., Baribeau, J.-M., Bratkovsky, A.M., Kamins, T.I., Tsybeskov, L.: Photoluminescence dynamics and auger fountain in three-dimensional Si/SiGe multilayer nanostructures. Phys. Rev. B 80, 049904 (2009b)
4. Lockwood D.J.: Light Emission in Silicon. Academic Press, San Diego (1998)
5. Lockwood, D.J., Tsybeskov, L.: Three-dimensional silicon-germanium nanostructures for CMOS compatible light emitters. In: Korkin, A., Krstić, P.S., Wells, J.C. (eds.) Nanotechnology for Electronics, Photonics, and Renewable Energy, pp. 41–84. Springer, New York (2010) and references therein
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