Enhancement of photocurrent in epitaxial lift-off thin-film GaInNAsSb solar cells due to light-confinement structure-Reference-Cited by-同舟云学术

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Enhancement of photocurrent in epitaxial lift-off thin-film GaInNAsSb solar cells due to light-confinement structure

Published:2018-06-08 Issue:7 Volume:11 Page:072301
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Miyashita Naoya,Behaghel Benoît,Guillemoles Jean-François,Okada Yoshitaka

Funder

Japan Society for the Promotion of Science

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/11/i=7/a=072301/pdf

Reference28 articles.

1. High efficiency GaAs thin film solar cells by peeled film technology

2. Extreme selectivity in the lift‐off of epitaxial GaAs films

3. High rate epitaxial lift-off of InGaP films from GaAs substrates

4. Multiple release layer study of the intrinsic lateral etch rate of the epitaxial lift-off process

5. Demonstration of Multiple Substrate Reuses for Inverted Metamorphic Solar Cells

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Inverted lattice-matched GaInP/GaAs/GaInNAsSb triple-junction solar cells;Photovoltaics for Space;2023

2. Inverted Lattice-Matched Triple Junction Solar Cells With 1.0 eV GaInNAsSb Subcell by MOCVD/MBE Hybrid Growth;IEEE Journal of Photovoltaics;2019-05

3. Pixelated GaSb solar cells on silicon by membrane bonding;Applied Physics Letters;2018-09-17

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