Multiple release layer study of the intrinsic lateral etch rate of the epitaxial lift-off process-Reference-Cited by-同舟云学术

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Multiple release layer study of the intrinsic lateral etch rate of the epitaxial lift-off process

Published:2004-11 Issue:7 Volume:79 Page:1801-1807
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl Phys A

Author:

Voncken M.M.A.J.,Schermer J.J.,Bauhuis G.J.,Mulder P.,Larsen P.K.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s00339-003-2100-1.pdf

Reference22 articles.

1. A. Ersen, I. Schnitzer, E. Yablonovitch, T. Gmitter: Solid State Electron. 36, 1731 (1993)

2. M. Konagai, M. Sugimoto, K. Takahashi: J. Cryst. Growth 45, 277 (1978)

3. J.C.C. Fan: J. Phys. 43, C1-327 (1982)

4. E. Yablonovitch, T. Gmitter, J.P. Harbison, R. Bhat: Appl. Phys. Lett. 51, 2222 (1987)

5. E. Yablonovitch, D.M. Hwang, T.J. Gmitter, L.T. Florez, J.P. Harbison: Appl. Phys. Lett. 56, 2419 (1990)

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