InAs quantum dot morphology after capping with In, N, Sb alloyed thin films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4864159
Reference25 articles.
1. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates
2. Over 1.5 μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition
3. Long-wavelength light emission from InAs quantum dots covered by GaAsSb grown on GaAs substrates
4. Long-wavelength light emission and lasing from InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer
5. Room temperature emission at 1.6μm from InGaAs quantum dots capped with GaAsSb
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