Effect of zinc diffusion from overgrownp‐InP layers on semi‐insulating InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348755
Reference23 articles.
1. Zinc contamination and misplaced p-n junctions in InP–GaInPAs d.h. lasers
2. Growth and characterization of 1.3 µm CW GaInAsP/InP lasers by liquid-phase epitaxy
3. Effect of doping level on the gain constant and modulation bandwidth of InGaAsP semiconductor lasers
4. Ultra-high speed semiconductor lasers
5. Effects of zinc doping of the antimeltback layer on 1.55‐μm InGaAsP/InP lasers
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Diffusion of acceptors in n-type and semi-insulating InP;Journal of Crystal Growth;2000-01
2. Zn-doping in OMVPE Grown lnP:Zn/lnGaAs/lnPp-i-n double heterojunctlons with lnGaAs:Zn contacting layers;Journal of Electronic Materials;1992-10
3. Growth of semi-insulating InP by GSMBE;Journal of Crystal Growth;1992-05
4. Effects of S, Si, or Fe dopants on the diffusion of Zn in InP during MOCVD;Journal of Electronic Materials;1992-02
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