Effect of doping level on the gain constant and modulation bandwidth of InGaAsP semiconductor lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95127
Reference9 articles.
1. Measurements of threshold carrier density of III‐V semiconductor laser diodes
2. Threshold temperature dependence of subnanosecond optically excited 1.3‐μm InGaAsP lasers
3. Temperature dependence of threshold current in III‐V semiconductor lasers: Experimental prediction and explanation
4. Direct amplitude modulation of short‐cavity GaAs lasers up toX‐band frequencies
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