Temperature effect on ultrathin SiO2 time-dependent-dielectric-breakdown
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1613367
Reference23 articles.
1. Reliability limits for the gate insulator in CMOS technology
2. Ultra-thin gate oxide reliability projections
3. Impact of temperature and breakdown statistics on reliability predictions for ultrathin oxides
4. Unifying the thermal–chemical and anode-hole-injection gate-oxide breakdown models
5. Non-Arrhenius temperature dependence of reliability in ultrathin silicon dioxide films
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