A high density FinFET one-time programmable cell with new intra-fin cell isolation for advanced system on chip applications-Reference-Cited by-同舟云学术

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A high density FinFET one-time programmable cell with new intra-fin cell isolation for advanced system on chip applications

Published:2016-03-10 Issue:4S Volume:55 Page:04EE06
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chen Yu-Zheng,Yuan Jo En,Peng Ping Chun,Hsiao Woan Yun,King Ya-Chin,Lin Chrong Jung

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/55/i=4S/a=04EE06/pdf

Reference33 articles.

1. A Novel Embedded OTP NVM Using Standard Foundry CMOS Logic Technology

2. A high-density logic CMOS process compatible non-volatile memory for sub-28nm technologies

3. A PROM element based on salicide agglomeration of poly fuses in a CMOS logic process

4. Electrically programmable fuse (eFUSE) using electromigration in silicides

5. A one time programming cell using more than two resistance levels of a polyfuse

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 1-kb FinFET Dielectric Resistive Random Access Memory Array in $1\times $ nm CMOS Logic Technology for Embedded Nonvolatile Memory Applications;IEEE Transactions on Electron Devices;2016-11

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