1-kb FinFET Dielectric Resistive Random Access Memory Array in $1\times $ nm CMOS Logic Technology for Embedded Nonvolatile Memory Applications-Reference-Cited by-同舟云学术

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1-kb FinFET Dielectric Resistive Random Access Memory Array in $1\times $ nm CMOS Logic Technology for Embedded Nonvolatile Memory Applications

Published:2016-11 Issue:11 Volume:63 Page:4273-4278
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Huang Kai Ping^ORCID,Pan Hsin Wei,Chen Shih Yu,Peng Ping Chun,Kuo Cheng-Hsiung,Chih Yue-Der,Lin Chrong Jung,King Ya-Chin

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7592488/07587361.pdf?arnumber=7587361

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of oxygen deficiency-rich/oxygen deficiency-poor stacked TiO2 based resistive random access memory by mist chemical vapor deposition;Ceramics International;2022-10

2. Realizing forming-free characteristic by doping Ag into HfO2-based RRAM;Applied Physics Express;2021-03-26

3. MoS 2 /Polymer Heterostructures Enabling Stable Resistive Switching and Multistate Randomness;Advanced Materials;2020-08-26

4. Investigation on High-κ Dielectric for Low Leakage AlGaN/GaN MIS-HEMT Device, Using Material Selection Methodologies;Semiconductors;2018-04

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