Interface-phonon-limited two-dimensional mobility in AlGaN∕GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2400508
Reference53 articles.
1. Nitride Semiconductors and Devices
2. GaN and Related Materials II
3. Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices
4. Polarization Induced Charge at Heterojunctions of the III-V Nitrides and Their Alloys
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