Characterization of SiGe/Si multi-quantum wells for infrared sensing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4855595
Reference15 articles.
1. Carbon-doped single-crystalline SiGe/Si thermistor with high temperature coefficient of resistance and low noise level
2. Improvement of infrared detection using Ge quantum dots multilayer structure
3. IR bolometers based on amorphous silicon germanium alloys
4. Uncooled infrared bolometer arrays operating in a low to medium vacuum atmosphere: performance model and tradeoffs
5. Preparation of vanadium oxide thin films with high temperature coefficient of resistance by facing targets d.c. reactive sputtering and annealing process
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1. Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region;Nanomaterials;2023-02-02
2. Pixel resistance optimization of a Si0.5Ge0.5/Si MQWs thermistor based on in-situ B doping for microbolometer applications;Infrared Technology and Applications XLIV;2018-05-29
3. Sensitivity of the crystal quality of SiGe layers grown at low temperatures by trisilane and germane;Thin Solid Films;2016-08
4. Single crystal diamond for infrared sensing applications;Applied Physics Letters;2014-10-20
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