Role of interfacial compound formation associated with the use of ZnO buffers layers in the hydride vapor phase epitaxy of GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126675
Reference23 articles.
1. GaN Growth Using GaN Buffer Layer
2. Crystal growth of column-III nitride semiconductors and their electrical and optical properties
3. Determination of the cubic to hexagonal fraction in GaN nucleation layers using grazing incidence x-ray scattering
4. Influence of Thermal Annealing on GaN Buffer Layers and the Property of Subsequent GaN Layers Grown by Metalorganic Chemical Vapor Deposition
5. Effects of thermal treatment of low-temperature GaN buffer layers on the quality of subsequent GaN layers
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