Enhancement of the room temperature luminescence of InAs quantum dots by GaSb capping
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2753716
Reference14 articles.
1. 1.3 μm room-temperature GaAs-based quantum-dot laser
2. Laser devices with stacked layers of InGaAs/GaAs quantum rings
3. Size control of InAs∕InP(001) quantum wires by tailoring P∕As exchange
4. Room-temperature 1.6μm light emission from InAs∕GaAs quantum dots with a thin GaAsSb cap layer
5. Room temperature emission at 1.6μm from InGaAs quantum dots capped with GaAsSb
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