Depth profile of trapped charges in oxide layer of 6H‐SiC metal–oxide–semiconductor structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.362817
Reference16 articles.
1. Radiation induced defects in CVD-grown 3C-SiC
2. Electrical Properties of 3C-SiC and its application to FET
3. Growth and Properties of β‐SiC Single Crystals
4. High‐temperature electrical properties of 3C‐SiC epitaxial layers grown by chemical vapor deposition
5. C-VCharacteristics of MOS Structures Fabricated of Al-Doped p-Type 3C-SiC Epilayers Grown on Si by Chemical Vapor Deposition
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