C-VCharacteristics of MOS Structures Fabricated of Al-Doped p-Type 3C-SiC Epilayers Grown on Si by Chemical Vapor Deposition-Reference-Cited by-同舟云学术

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C-VCharacteristics of MOS Structures Fabricated of Al-Doped p-Type 3C-SiC Epilayers Grown on Si by Chemical Vapor Deposition

Published:1991-02-15 Issue:Part 1, No. 2 Volume:30 Page:240-243
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shinohara Mikiya,Yamanaka Mitsugu,Misawa Shunji,Okumura Hajime,Yoshida Sadafumi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of Threshold Voltage Instability of SiC MOSFETs Under Different Gate Voltage Sequences;IEEE Transactions on Electron Devices;2024-04

2. Inversion Layer Electron Transport in 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistors;Silicon Carbide;2011-03-28

3. Inversion layer electron transport in 4H-SiC metal-oxide-semiconductor field-effect transistors;physica status solidi (a);2009-06-25

4. Electrical Characteristics of Near-Interface Traps in 3C-SiC Metal–Oxide–Semiconductor Capacitors;IEEE Electron Device Letters;2008-09

5. Silica on Silicon Carbide;Critical Reviews in Solid State and Materials Sciences;2008-02-13

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