A pressure-tuned blue-violet InGaN/GaN laser diode grown on bulk GaN crystal-Reference-Cited by-同舟云学术

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A pressure-tuned blue-violet InGaN/GaN laser diode grown on bulk GaN crystal

Published:2004-02-23 Issue:8 Volume:84 Page:1236-1238
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Suski T.,Franssen G.,Perlin P.,Bohdan R.,Bercha A.,Adamiec P.,Dybala F.,Trzeciakowski W.,Prystawko P.,Leszczyński M.,Grzegory I.,Porowski S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1649801

Reference11 articles.

1. High pressure measurements on visible spectrum AlxGa1−xAs heterostructure lasers: 7100–6750‐Å 300‐K operation

2. Effect of indirect minima carrier population on the output characteristics of AlGaInP light-emitting diodes

3. Effect of pressure and temperature on AlGaInP and AlGaAs laser diodes

4. Unusual increase of the Auger recombination current in 1.3 μm GaInNAs quantum-well lasers under high pressure

5. Blue Laser on High N2Pressure-Grown Bulk GaN

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2. Conductometric nitrogen dioxide gas sensor based on gallium nitride quantum dots film;Sensors and Actuators B: Chemical;2023-03

3. Proliferation of the Light and Gas Interaction with GaN Nanorods Grown on a V-Grooved Si(111) Substrate for UV Photodetector and NO2 Gas Sensor Applications;ACS Applied Materials & Interfaces;2021-06-18

4. Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction;Optics Express;2021-01-11

5. Tunable Violet Laser Diode System for Optical Wireless Communication;IEEE Photonics Technology Letters;2020-05-01

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