High pressure measurements on visible spectrum AlxGa1−xAs heterostructure lasers: 7100–6750‐Å 300‐K operation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93545
Reference9 articles.
1. COHERENT (VISIBLE) LIGHT EMISSION FROM Ga(As1−xPx) JUNCTIONS
2. Coherent Light Emission From GaAs Junctions
3. Low threshold, high efficiency Ga1−xAlxAs single quantum well visible diode lasers grown by metalorganic chemical vapor deposition
4. CW room-temperature visible single quantum well Ga0.73Al0.27As diode lasers grown by metalorganic chemical vapour deposition
5. Quantum-well heterostructure lasers
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1. A pressure-tuned blue-violet InGaN/GaN laser diode grown on bulk GaN crystal;Applied Physics Letters;2004-02-23
2. High-pressure studies of GaAs-Ga1−xAlxAs quantum wells of widths 26 to 150 Å;Physical Review B;1986-06-15
3. Cryogenic‐pressure response of optical transitions in quantum well and bulk GaAs: A direct comparative study;Journal of Applied Physics;1985-12-15
4. The diode laser in atomic physics;Contemporary Physics;1985-09
5. Hydrostatic pressure measurements (≲12 kbar) on single‐ and multiple‐stripe quantum‐well heterostructure laser diodes;Journal of Applied Physics;1985-03
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