Hydrostatic pressure measurements (≲12 kbar) on single‐ and multiple‐stripe quantum‐well heterostructure laser diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334461
Reference21 articles.
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5. Pressure dependence of AlxGa1−xAs light emitting diodes near the direct‐indirect transition
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1. Effective-mass carrier complete mini-gaps in three-dimensional periodically structured semiconductors;Optical and Quantum Electronics;2002
2. Complete minigaps for effective-mass carriers in three-dimensional semiconductor superlattices;Physical Review B;2000-09-15
3. Chapter 4 Optical Properties of Semiconductors under Pressure;Semiconductors and Semimetals;1998
4. Influence of the barriers on the temperature dependence of threshold current in GaAs/AlGaAs quantum well lasers;IEEE Journal of Quantum Electronics;1989-06
5. Effect of hydrostatic pressure on GaAs-Ga1−xAlxAs microstructures;Physical Review B;1987-04-15
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