Dependence of InGaP/InGaAlP heterointerface smoothness on substrate misorientation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363238
Reference16 articles.
1. Highly Reliable Operation of InGaP/InGaAlP Multi-Quantum-Well Visible Laser Diodes
2. Improvement in the temperature characteristics of 630 nm band InGaAlP multiquantum-well laser diodes using a 15° misoriented substrate
3. High temperature (77 °C) operation of 634 nm InGaAlP multiquantum‐well laser diodes with tensile‐strained quantum wells
4. Tensile strained QW structure for low-threshold operation of short-wavelength AlGaInP LDs emitting in the 630nm band
5. High temperature (74 degrees C) CW operation of 634 nm InGaAlP laser diodes utilizing a multiple quantum barrier
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1. Growth of InGaAs/InAlAs superlattices for strain balanced quantum cascade lasers by molecular beam epitaxy;Journal of Crystal Growth;2023-07
2. Effect of Substrate Misorientation on the Structural and Optical Characteristics of In-Rich InGaAs/GaAsP Quantum Wells;Applied Sciences;2021-09-17
3. MOVPE growth of laser structures for high-power applications at different ambient temperatures;Journal of Crystal Growth;2016-10
4. Influence of substrate misorientation on vibrational properties of In1−x−yGaxAlyAs grown on InP;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004-01
5. Nondestructive assessment of In0.48(Ga1−xAlx)0.52P films grown on GaAs (001) by low pressure metalorganic chemical vapor deposition;Journal of Applied Physics;1999-04
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