Resistive switching by migration of hydrogen ions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4737897
Reference15 articles.
1. Developmental mechanism for the resistance change effect in perovskite oxide-based resistive random access memory consisting of Bi2Sr2CaCu2O8+δ bulk single crystal
2. Effect of oxygen content and superconductivity on the nonvolatile resistive switching in YBa2Cu3O6+x/Nb-doped SrTiO3 heterojunctions
3. Evidence for an Oxygen Diffusion Model for the Electric Pulse Induced Resistance Change Effect in Transition-Metal Oxides
4. Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3
5. Origin of Negative Differential Resistance Observed on Bipolar Resistance Switching Device with Ti/Pr0.7Ca0.3MnO3/Pt Structure
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