Abstract
Abstract
We investigate resistance switching in proton-memristive NdNiO3 film devices via the diffusional migration of a proton dopant by using electric field control. Lattice strain is found to play a significant role in determining proton migration within NdNiO3 thin film. Compressive strain can accelerate the migration, resulting in a switching efficiency of 28.22% which is significantly higher than 0.21% on a tensile-strained device. The results demonstrate the significance of strain engineering and will guide the development of the design of multifunctional perovskite devices for emerging iontronics memory and computing applications.
Funder
Nanotechnology Platform Projects (Nanotechnology Open Facilities in Osaka University) of MEXT, Japan
Kazuchika Okura Memorial Foundation
JSPS KAKENHI: Grant-in-Aid for Scientific Research on Innovative Areas “Hydrogenomics”
Subject
General Physics and Astronomy,General Engineering
Cited by
2 articles.
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