Spatially confined nickel disilicide formation at 400 °C on ion implantation preamorphized silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110214
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1. Low temperature epitaxial NiSi2 formation on Si(111) by diffusing Ni through amorphous Ni–Zr
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5. A Novel Process to Form Epitaxial Si Structures With Buried Silicide
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