The effect of the internal capacitance of InGaN-light emitting diode on the electrostatic discharge properties
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3114974
Reference8 articles.
1. Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire
2. InGaN-light emitting diode with high density truncated hexagonal pyramid shaped p-GaN hillocks on the emission surface
3. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
4. Illumination with solid state lighting technology
5. High Electrostatic Discharge Protection Using Multiple Si:N/GaN and Si:N/Si:GaN Layers in GaN-Based Light Emitting Diodes
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