Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1537517
Reference8 articles.
1. Nitride-based semiconductors for blue and green light-emitting devices
2. Epitaxial lateral overgrowth techniques used in group III nitride epitaxy
3. Epitaxial Lateral Overgrowth of GaN
4. Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystals
5. Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal–organic chemical-vapor deposition
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