Effects of additive elements on improvement of the dielectric properties of Ta2O5films formed by metalorganic decomposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1532940
Reference22 articles.
1. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's
2. Non-Arrhenius temperature dependence of reliability in ultrathin silicon dioxide films
3. Effects of additive elements on electrical properties of tantalum oxide films
4. Influence of postdeposition annealing on the enhanced structural and electrical properties of amorphous and crystalline Ta2O5 thin films for dynamic random access memory applications
5. Some Properties of RF Sputtered Al2 O 3 ‐ Ta2 O 5 Composite Thin Films
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