Carrier lifetimes and interface recombination velocities in CdTe/MgxCd1−xTe double heterostructures with different Mg compositions grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

Carrier lifetimes and interface recombination velocities in CdTe/MgxCd1−xTe double heterostructures with different Mg compositions grown by molecular beam epitaxy

Published:2015-07-27 Issue:4 Volume:107 Page:041120
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu Shi¹²^ORCID,Zhao Xin-Hao¹³,Campbell Calli M.¹³,Lassise Maxwell B.¹²,Zhao Yuan¹²,Zhang Yong-Hang¹²

Affiliation:

1. Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287, USA

2. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA

3. School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, USA

Funder

DOE/BAPVC

Air Force Office of Scientific Research (AFOSR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4927757

Reference20 articles.

1. Interfacial recombination velocity in GaAlAs/GaAs heterostructures

2. Very low interface recombination velocity in (Al,Ga)As heterostructures grown by organometallic vapor‐phase epitaxy

3. Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces

4. Minority Carrier Lifetime Analysis in the Bulk of Thin-Film Absorbers Using Subbandgap (Two-Photon) Excitation

5. Unusually low surface recombination and long bulk lifetime in n-CdTe single crystals

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