Passivation of CdTe/MgCdTe double heterostructure by dielectric thin films deposited using atomic layer deposition-Reference-Cited by-同舟云学术

Passivation of CdTe/MgCdTe double heterostructure by dielectric thin films deposited using atomic layer deposition

Published:2023-10-03 Issue:13 Volume:134 Page:
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:

Author:

Abbasi Haris Naeem¹^ORCID,Qi Xin²^ORCID,Gong Jiarui¹³^ORCID,Ju Zheng⁴^ORCID,Min Seunghwan¹^ORCID,Zhang Yong-Hang²^ORCID,Ma Zhenqiang¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of Wisconsin-Madison 1 , Madison, Wisconsin 53706, USA

2. School of Electrical, Computer and Energy Engineering, Arizona State University 2 , Tempe, Arizona 85287, USA

3. Department of Physics, University of Wisconsin-Madison 3 , Madison, Wisconsin 53706, USA

4. Department of Physics, Arizona State University 4 , Tempe, Arizona 85287, USA

Abstract

This work reports a study of the passivation effects of different dielectric thin films deposited on monocrystalline CdTe/MgCdTe double heterostructures (DHs) using atomic layer deposition (ALD). Enhanced photoluminescence intensity was observed in all DHs with surface passivation, and increased photogenerated carrier lifetime was observed in DHs with HfO2, TiO2, Al2O3, and TiN passivated CdTe/MgCdTe DHs. These results have demonstrated effective suppression of the undesired surface recombination of CdTe/MgCdTe DHs by dielectric thin films deposited via ALD.

Funder

Air Force Research Laboratory

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/5.0161858/18150082/135304_1_5.0161858.pdf

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