Very low interface recombination velocity in (Al,Ga)As heterostructures grown by organometallic vapor‐phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341298
Reference10 articles.
1. Minority carrier lifetime and luminescence in MOVPE-grown (Al,Ga)As epilayers and DH lasers
2. Low Interface Recombination Velocity in GaAs-(Al, Ga)As Double Heterostructures Grown by Metal Organic Vapour Phase Epitaxy
3. Survey of defect‐mediated recombination lifetimes in GaAs epilayers grown by different methods
4. Gain-current relation for GaAs lasers with n-type and undoped active layers
Cited by 41 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Performance of State-of-the-Art CdTe-Based Solar Cells: What Has Changed?;IEEE Journal of Photovoltaics;2024-09
2. Optimization of a GaAs/AlGaAs p-i-n heterojunction nanowire solar cell for improved optical and electrical properties;Journal of the Optical Society of America B;2023-09-29
3. Heterovalent semiconductor structures and devices grown by molecular beam epitaxy;Journal of Vacuum Science & Technology A;2021-05
4. High-performance solid-state photon-enhanced thermionic emission solar energy converters with graded bandgap window-layer;Journal of Physics D: Applied Physics;2020-11-09
5. A Si-based InP/InGaAs nanowire array photodetector operating at telecommunication wavelength;Photonics and Nanostructures - Fundamentals and Applications;2020-07
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3