Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films-Reference-Cited by-同舟云学术

Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films

Published:2008-05-19 Issue:20 Volume:92 Page:202902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Park Tae Joo,Kim Jeong Hwan,Jang Jae Hyuck,Na Kwang Duk,Hwang Cheol Seong,Kim Gee-Man,Choi Kang Jun,Jeong Jae Hak

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2921785

Reference13 articles.

1. C. Zhao, T. Schram, A. Van Ammel, T. Conrad, S. De Gendt, and N. Yamada, Proceedings of the International Conference on Solid-State and Integrated Circuit Technology (IEEE, New York, 2006), 418–420.

2. Microstructural and electrical characteristics of reactively sputtered Ta-N thin films

3. XPS and ARXPS investigations of ultra thin TaN films deposited on SiO2 and Si

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasma Enhanced Atomic Layer Deposition of Tantalum (V) Oxide;Coatings;2021-10-01

2. Mixed‐Anion Compounds: An Unexplored Playground for ALD Fabrication;Advanced Materials Interfaces;2021-05-06

3. Investigation of Thermal Atomic Layer Deposited TaAlC with Low Effective Work-Function on HfO2Dielectric Using TaCl5and TEA as Precursors;ECS Journal of Solid State Science and Technology;2016-12-17

4. Thermal Atomic Layer Deposition of TaAlC with TaCl5and TMA as Precursors;ECS Journal of Solid State Science and Technology;2016

5. Generic trend of work functions in transition-metal carbides and nitrides;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2014-11