High Quality Ohmic Contacts on n-type 3C-SiC Obtained by High and Low Process Temperature
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Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology;Materials;2021-10-05
2. Multiple-graphene layer based p++–n–n−–n++ device on Si/3C-SiC (100) substrate: a highly sensitive visible photo-sensor;Semiconductor Science and Technology;2020-08-05
3. Si/SiC heterostructure MITATT oscillator for higher-harmonic THz-power generation: theoretical reliability and experimental feasibility studies of quantum modified non-linear classical model;Microsystem Technologies;2019-08-16
4. Cubic versus hexagonal SiC vertical pin SPST/SPDT/SPMT switches for MMW communication systems: a modified quantum drift-diffusion model for switching characteristics analysis;Microsystem Technologies;2019-05-15
5. Physics based non-linear large-signal analysis of multiple-graphene layer exotic pin (p++–n−–n–n++) devices and ultra-fast SPST/SPDT/SPMT switches on Si/3C-SiC (100) substrates for application in THz-communication;Microsystem Technologies;2019-01-30
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