Physics based non-linear large-signal analysis of multiple-graphene layer exotic pin (p++–n−–n–n++) devices and ultra-fast SPST/SPDT/SPMT switches on Si/3C-SiC (100) substrates for application in THz-communication-Reference-Cited by-同舟云学术

Physics based non-linear large-signal analysis of multiple-graphene layer exotic pin (p++–n−–n–n++) devices and ultra-fast SPST/SPDT/SPMT switches on Si/3C-SiC (100) substrates for application in THz-communication

Published:2019-01-30 Issue: Volume: Page:
ISSN:0946-7076
Container-title:Microsystem Technologies
language:en
Short-container-title:Microsyst Technol

Author:

Kundu Abhijit,Mukherjee Moumita

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1007/s00542-019-04325-2/fulltext.html

Reference40 articles.

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3. Bazin AE, Michaud JF et al (2010) High quality ohmic contacts on n-type 3C–SiC–SiC obtained by high and low process temperature. AIP Conf Proc 192:51–54. https://doi.org/10.1063/1.3518309

4. Bogle JJ, Hubert RJ, Boles TE (2010) A 50 watt monolithic surface-mount series–shunt pin diode switch with integrated thermal sink. Proceeding of Asia-Pacific conference. https://ieeexplore.ieee.org/document/5728262/

5. Cho SY, Kim HM et al (2012) Direct formation of graphene layers on top SiC during carburization of si substrate. Curr Appl Phys 1088–1091. agris.fao.org/agris-search/search.do?recordID=US201500132979

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