Multiple-graphene layer based p++–n–n−–n++ device on Si/3C-SiC (100) substrate: a highly sensitive visible photo-sensor
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6641/ab909b/pdf
Reference34 articles.
1. Terahertz and infrared photodetection using p-i-n multiple-graphene-layer structures
2. Room temperature velocity saturation in intrinsic graphene
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