Photo-electric Characteristics Analysis of Quantum Corrected Strained Nanowire Drift-Diffusion Model based Si/Si<sub>0.98</sub>C<sub>0.02</sub> Asymmetrical Super-lattice Near Infrared Photo-detector-Reference-Cited by-同舟云学术

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Photo-electric Characteristics Analysis of Quantum Corrected Strained Nanowire Drift-Diffusion Model based Si/Si_0.98C_0.02 Asymmetrical Super-lattice Near Infrared Photo-detector

Published:2023-03-16 Issue: Volume: Page:
ISSN:
Container-title:2023 4th International Conference on Computing and Communication Systems (I3CS)
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Author:

Bhattacharya Saunak¹,Kundu Abhijit¹,Chakraborty Debraj²,Sarkar Angsuman³,Biswas Satarupa⁴,Mukherjee Moumita⁴

Affiliation:

1. Engineering College,Dept. of ECE, Chaibasa,haibasa,India

2. Adamas University,Dept. of ECE,Kolkata,India

3. Kalyani Govt. Engineering College,Dept. of ECE,Kalyani,India

4. Adamas University,Dept. of Physics,Kolkata,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10127223/10127224/10127313.pdf?arnumber=10127313

Reference13 articles.

1. Characteristics of Novel Silicon pin Photodiode Made by Rapid Thermal Diffusion Technique;ismail;Journal of Electron Devices,2012

2. Design and characterization of asymetrical super-lattice Si/4H-SiC pin photo diode array: a potential opto-sensor for future applications in bio-medical domain

3. Multiple-graphene layer based p++–n–n−–n++ device on Si/3C-SiC (100) substrate: a highly sensitive visible photo-sensor

4. Strain—Engineered Asymmetrical Si/Si1–xGex IR-Photo-Detector: Theoretical Reliability and Experimental Feasibility Studies

5. In situ passivation of GaAsSb nanowires for enhanced infrared photoresponse

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