Evidence for voltage drops at misaligned wafer-bonded interfaces of AlGaInP light-emitting diodes by electrostatic force microscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1406549
Reference17 articles.
1. Very high‐efficiency semiconductor wafer‐bonded transparent‐substrate (AlxGa1−x)0.5In0.5P/GaP light‐emitting diodes
2. Wafer bonding of 50‐mm diameter GaP to AlGaInP‐GaP light‐emitting diode wafers
3. Wafer bonding of 75 mm diameter GaP to AlGaInP-GaP light-emitting diode wafers
4. 1.4× efficiency improvement in transparent-substrate (AlxGa1−x)0.5In0.5P light-emitting diodes with thin (⩽2000 Å) active regions
5. High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency
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2. Degradation studies of InGaN/GaN heterostructure laser diodes using a Kelvin Force Microscope;SPIE Proceedings;2007-02-08
3. Voltage drop in an (AlxGa1−x)0.5In0.5P light-emitting diode probed by Kelvin probe force microscopy;Applied Physics Letters;2006-09-04
4. Kelvin force microscopy on a (Al 1-x Ga x ) 0.5 In 0.5 P light-emitting diode;Light-Emitting Diodes: Research, Manufacturing, and Applications X;2006-02-09
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