Permeable base transistor fabrication by selective epitaxial growth of silicon on a submicrometer WSi2grid
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102949
Reference10 articles.
1. A comparison of etched-geometry and overgrown silicon permeable base transistors by two-dimensional numerical simulations
2. Dual-gate silicon permeable-base transistors built on LPVPE-grown material
3. Si permeable-base transistor realization using a MOS-compatible technology
4. SPE-CoSi2submicrometer lines by lift-off using selective reaction and its application to a permeable-base transistor
5. CoSi2and Si epitaxial growth in 〈111〉 Si submicron lines with application to a permeable base transistor
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