A comparison of etched-geometry and overgrown silicon permeable base transistors by two-dimensional numerical simulations-Reference-Cited by-同舟云学术

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A comparison of etched-geometry and overgrown silicon permeable base transistors by two-dimensional numerical simulations

Published:1983-08 Issue:8 Volume:30 Page:877-883
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Vojak B.A.,Alley G.D.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31880/01483131.pdf?arnumber=1483131

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bipolar Permeable Transistor;Wiley Encyclopedia of Electrical and Electronics Engineering;1999-12-27

2. Formation and Characterization of Spe Grown Ultra-Thin Cobalt Disilicide Film;MRS Proceedings;1999

3. AN INVESTIGATION OF THE BLOCKING CHARACTERISTICS OF THE PERMEABLE BASE TRANSISTOR;Solid-State Electronics;1998-03

4. Investigation of hot carrier transport in silicon permeable base transistors;IEEE Transactions on Electron Devices;1996-06

5. Processing and characterization of a PBT device using self-aligned CoSi2;Semiconductor Science and Technology;1994-12-01

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