Interlevel transitions and two-photon processes in Ge/Si quantum dot photocurrent
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2919151
Reference20 articles.
1. Photoconductivity of Ge/Si quantum dot photodetectors
2. Intervalence‐subband transition in SiGe/Si multiple quantum wells−normal incident detection
3. Normal incidence hole intersubband quantum well infrared photodetectors in pseudomorphic GexSi1 − x/Si
4. Medium‐wavelength, normal‐incidence, p‐type Si/SiGe quantum well infrared photodetector with background limited performance up to 85 K
5. Midinfrared photoconductivity of Ge/Si self-assembled quantum dots
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