Plasmon polariton enhanced mid-infrared photodetectors based on Ge quantum dots in Si
Author:
Affiliation:
1. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Science, 630090 Novosibirsk, Russia
2. Tomsk State University, 634050 Tomsk, Russia
3. Novosibirsk State University, 630090 Novosibirsk, Russia
Funder
Russian State Programme
Russian Foundation for Basic Research (RFBR)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4986986
Reference46 articles.
1. The theory of quantum-dot infrared phototransistors
2. Evaluation of the fundamental properties of quantum dot infrared detectors
3. Phonon scattering and energy relaxation in two-, one-, and zero-dimensional electron gases
4. Intrinsic mechanism for the poor luminescence properties of quantum-box systems
5. Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature
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